5.5 GHz to 18 GHz, GaAs, pHEMT, MMIC,

Medium Power Amplifier

Data Sheet

HMC1082CHIP

Rev. B

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FEATURES

High saturated output power: 26 dBm with 24% PAE

High gain: 24 dB typical

High output IP3: 36 dBm typical

High output P1dB: 25.5 dBm

Die size: 2.19 mm × 1.05 × 0.1 mm

APPLICATIONS

Software defined radios

Electronics warfare (EW)

Radar applications

Electronic countermeasures (ECMs)

FUNCTIONAL BLOCK DIAGRAM

RFIN

2.5kΩ

2.5kΩ

RFOUT

HMC1082CHIP

1

2

3

6

4

5

Figure 1.

GENERAL DESCRIPTION

The HMC1082CHIP is a gallium arsenide (GaAs), monolithic

microwave integrated circuit (MMIC), pseudomorphic high

electron mobility transistor (pHEMT), driver amplifier that

operates from 5.5 GHz to 18 GHz. The HMC1082CHIP provides

a typical gain of 24 dB, 36 dBm output IP3, and 25.5 dBm of

output power for 1 dB compression, requiring only 220 mA

is 26 dBm with 24% power added efficiency (PAE).

The HMC1082CHIP is an ideal driver amplifier for a wide range

of applications including point to point radios from 5.5 GHz to

18 GHz and marine radars at 9 GHz. The HMC1082CHIP can

also be used for 6 GHz to 18 GHz EW and ECM applications.