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ADRF5424 Datasheet(PDF) 3 Page - Analog Devices |
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ADRF5424 Datasheet(HTML) 3 Page - Analog Devices |
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3 / 12 page ![]() Preliminary Technical Data ADRF5424 Rev. PrD | Page 3 of 12 SPECIFICATIONS ELECTRICAL SPECIFICATIONS VDD = 3.3 V, VSS = −3.3 V, VCTRL = 0 V or VDD, and die temperature (TDIE)1 = 25°C for 50 Ω system, unless otherwise noted. Table 1. Parameter Symbol Test Conditions/Comments Min Typ Max Unit FREQUENCY RANGE f 100 60,000 MHz INSERTION LOSS Between RFC and RF1/RF2 (On) 100 MHz to 18 GHz 0.8 dB 18 GHz to 26 GHz 1.0 dB 26 GHz to 44 GHz 1.2 dB 44 GHz to 55 GHz 1.8 dB 55 GHz to 60 GHz 2.2 dB RETURN LOSS RFC and RF1/RF2 (On) 100 MHz to 18 GHz 13 dB 18 GHz to 44 GHz 12 dB 44 GHz to 55 GHz 12 dB 55 GHz to 60 GHz 12 dB ISOLATION Between RFC and RF1/RF2 or 100 MHz to 18 GHz 44 dB Between RF1 and RF2 18 GHz to 44 GHz 35 dB 44 GHz to 55 GHz 35 dB 55 GHz to 60 GHz 30 dB SWITCHING CHARACTERISTICS Rise and Fall Time tRISE, tFALL 10% to 90% of RF output 2 ns On and Off Time tON, tOFF 50% VCTRL to 90% of RF output 10 ns RF Settling Time 0.1 dB 50% VCTRL to 0.1 dB of final RF output 17 ns 0.05 dB 50% VCTRL to 0.05 dB of final RF output 22 ns INPUT LINEARITY2 200 MHz to 40 GHz 1 dB Power Compression P1dB TBD dBm Third-Order Intercept IP3 Two tone input power = 12 dBm each tone, Δf = 1 MHz 50 dBm SUPPLY CURRENT VDD and VSS pads Positive Supply Current IDD 14 µA Negative Supply Current ISS 120 µA DIGITAL CONTROL INPUTS CTRL pad Voltage Low VINL 0 0.8 V High VINH 1.2 3.3 V Current Low and High IINL, IINH <1 µA RECOMMENDED OPERATING CONDITONS Supply Voltage Positive VDD 3.15 3.45 V Negative VSS −3.45 −3.15 V Digital Control Voltage VCTRL 0 VDD V RF Input Power3 PIN f = 200 MHz to 40 GHz, TDIE 1 = 85°C4 Through Path RF signal is applied to RFC or through connected RF1/RF2 27 dBm Hot Switching RF signal is present at RFC while switching between RF1 and RF2 27 dBm Die Temperature1 TDIE1 -40 +105 °C |
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