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AT90USB646 Datasheet(PDF) 382 Page - ATMEL Corporation |
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AT90USB646 Datasheet(HTML) 382 Page - ATMEL Corporation |
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382 / 434 page  382 7593A–AVR–02/06 AT90USB64/128 Note: 1. The timing requirements shown in Figure 29-7 (i.e., tDVXH, tXHXL, and tXLDX) also apply to read- ing operation. Notes: 1. tWLRH is valid for the Write Flash, Write EEPROM, Write Fuse bits and Write Lock bits commands. 2. tWLRH_CE is valid for the Chip Erase command. 29.7 Serial Downloading Both the Flash and EEPROM memory arrays can be programmed using a serial programming bus while RESET is pulled to GND. The serial programming interface consists of pins SCK, PDI (input) and PDO (output). After RESET is set low, the Programming Enable instruction needs to be executed first before program/erase operations can be executed. NOTE, in Table 29-14 on page 383, the pin mapping for serial programming is listed. Not all packages use the SPI pins dedicated for the internal Serial Peripheral Interface - SPI. Table 29-13. Parallel Programming Characteristics, V CC = 5V ± 10% Symbol Parameter Min Typ Max Units VPP Programming Enable Voltage 11.5 12.5 V IPP Programming Enable Current 250 μA tDVXH Data and Control Valid before XTAL1 High 67 ns tXLXH XTAL1 Low to XTAL1 High 200 ns tXHXL XTAL1 Pulse Width High 150 ns tXLDX Data and Control Hold after XTAL1 Low 67 ns tXLWL XTAL1 Low to WR Low 0 ns tXLPH XTAL1 Low to PAGEL high 0 ns tPLXH PAGEL low to XTAL1 high 150 ns tBVPH BS1 Valid before PAGEL High 67 ns tPHPL PAGEL Pulse Width High 150 ns tPLBX BS1 Hold after PAGEL Low 67 ns tWLBX BS2/1 Hold after WR Low 67 ns tPLWL PAGEL Low to WR Low 67 ns tBVWL BS2/1 Valid to WR Low 67 ns tWLWH WR Pulse Width Low 150 ns tWLRL WR Low to RDY/BSY Low 0 1 μs tWLRH WR Low to RDY/BSY High (1) 3.7 4.5 ms tWLRH_CE WR Low to RDY/BSY High for Chip Erase (2) 7.5 9 ms tXLOL XTAL1 Low to OE Low 0 ns tBVDV BS1 Valid to DATA valid 0 250 ns tOLDV OE Low to DATA Valid 250 ns tOHDZ OE High to DATA Tri-stated 250 ns |
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