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FDMS86181 Datasheet(PDF) 1 Page - ON Semiconductor

Part # FDMS86181
Description  MOSFET - Power, Single N-Channel, Shielded Gate, POWERTRENCH
PDF  7 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

FDMS86181 Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2015
December, 2020 − Rev. 3
1
Publication Order Number:
FDMS86181/D
MOSFET - Power, Single
N-Channel, Shielded Gate,
POWERTRENCH)
100 V, 124 A, 4.2 m
W
FDMS86181
General Description
This N −Channel MV MOSFET is produced using
ON Semiconductor’s advanced POWERTRENCH® process that
incorporates Shielded Gate technology. This process has been
optimized to minimise on−state resistance and yet maintain superior
switching performance with best in class soft body diode.
Features
• Shielded Gate MOSFET Technology
• Max rDS(on) = 4.2 mW at VGS = 10 V, ID = 44 A
• Max rDS(on) = 12 mW at VGS = 6 V, ID = 22 A
• ADD
• 50% lower Qrr than other MOSFET suppliers
• Lowers switching noise/EMI
• MSL1 robust package design
• 100% UIL tested
• RoHS Compliant
Applications
• Primary DC−DC MOSFET
• Synchronous Rectifier in DC−DC and AC−DC
• Motor Drive
• Solar
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
VDS
Drain to Source Voltage
100
V
VGS
Gate to Source Voltage
±20
V
ID
Drain Current:
− Continuous TC = 25°C (Note 5)
− Continuous TC = 100°C (Note 5)
− Continuous TA = 25°C (Note 1a)
− Pulsed (Note 4)
124
78
17
510
A
EAS
Single Pulse Avalanche Energy (Note 3)
337
mJ
PD
Power Dissipation:
TC = 25°C
TA = 25°C (Note 1a)
125
2.5
W
TJ, TSTG Operating and Storage Junction Tempera-
ture Range
−55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
Power 56
(PQFN8)
CASE 483AE
See detailed ordering and shipping information on page 2 of
this data sheet.
ORDERING INFORMATION
N-Channel MOSFET
MARKING DIAGRAM
$Y&Z&3&K
FDMS
86181
$Y
= ON Semiconductor Logo
&Z
= Assembly Plant Code
&3
= Data Code (Year & Week)
&K
= Lot
FDMS86181
= Specific Device Code
D
D
D
D
S
S
S
G
Bottom
Top
Pin 1
G
S S
S
D
D D
D
D
D
D
D
S
S
S
G


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