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FDMS86181 Datasheet(PDF) 2 Page - ON Semiconductor

Part # FDMS86181
Description  MOSFET - Power, Single N-Channel, Shielded Gate, POWERTRENCH
PDF  7 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

FDMS86181 Datasheet(HTML) 2 Page - ON Semiconductor

  FDMS86181 Datasheet HTML 1Page - ON Semiconductor FDMS86181 Datasheet HTML 2Page - ON Semiconductor FDMS86181 Datasheet HTML 3Page - ON Semiconductor FDMS86181 Datasheet HTML 4Page - ON Semiconductor FDMS86181 Datasheet HTML 5Page - ON Semiconductor FDMS86181 Datasheet HTML 6Page - ON Semiconductor FDMS86181 Datasheet HTML 7Page - ON Semiconductor  
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FDMS86181
www.onsemi.com
2
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Quantity
FDMS86181
FDMS86181
Power 56 (PQFN8)
(Pb-Free / Halogen Free)
3000/Tape&Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
RqJC
Thermal Resistance, Junction to Case
1.0
°C/W
RqJA
Thermal Resistance, Junction to Ambient (Note 1a)
50
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BVDSS
Drain to Source Breakdown Voltage
ID = 250 mA, VGS = 0 V
100
V
DBVDSS
/DTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 mA, referenced to 25°C
60
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 80 V, VGS = 0 V
1
mA
IGSS
Gate to Source Leakage Current, Forward VGS = ±20 V, VDS = 0 V
100
nA
ON CHARACTERISTICS
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 mA
2.0
3.1
4.0
V
DVGS(th)
/DTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 mA, referenced to 25°C
−9
mV/°C
rDS(on)
Static Drain to Source On Resistance
VGS = 10 V, ID = 44 A
3.3
4.2
mW
VGS = 6 V, ID = 22 A
5.3
12
VGS = 10 V, ID = 44 A, TJ = 125°C
5.7
7.8
gFS
Forward Transconductance
VDS = 10 V, ID = 44 A
116
S
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
VDS = 50 V, VGS = 0 V, f = 1 MHz
2945
4125
pF
Coss
Output Capacitance
1730
2425
pF
Crss
Reverse Transfer Capacitance
20
40
pF
Rg
Gate Resistance
f = 1MHz
0.1
1.3
2.6
W
SWITCHING CHARACTERISTICS
td(on)
Turn-On Delay Time
VDD = 50 V, ID = 44 A, VGS = 10 V,
RGEN = 6 W
17
31
ns
tr
Rise Time
9
18
ns
td(off)
Turn-Off Delay Time
25
40
ns
tf
Fall Time
6
12
ns
Qg
Total Gate Charge
VGS = 0 V to 10 V, VDD = 50 V,
ID = 44 A
42
59
nC
VGS = 0 V to 6 V, VDD = 50 V,
ID = 44 A
27
38
nC
Qgs
Gate to Source Charge
VDD = 50 V, ID = 44 A
13
nC
Qgd
Gate to Drain “Miller” Charge
9.3
nC



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