FDMS86181 datasheet(3/7 Pages) ONSEMI

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FDMS86181

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (continued)

Symbol

Unit

Max

Typ

Min

Test Condition

Parameter

DRAIN-SOURCE DIODE CHARACTERISTICS

VSD

Source to Drain Diode Forward Voltage

VGS = 0 V, IS = 2.1 A (Note 2)

0.7

1.2

VGS = 0 V, IS = 44 A (Note 2)

0.8

1.3

trr

Reverse Recovery Time

IF = 20 A, di/dt = 300 A/ms

Qrr

Reverse Recovery Charge

trr

Reverse Recovery Time

IF = 20 A, di/dt = 1000 A/ms

Qrr

Reverse Recovery Charge

158

253

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

NOTES:

1. RqJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. RqCA is determined

by the user’s board design.

a. 50 °C/W when mounted on a

1 in2 pad of 2 oz copper.

b. 125 °C/W when mounted on a

minimum pad of 2 oz copper.

2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.

3. EAS of 337 mJ is based on starting TJ = 25°C, N−ch: L = 3 mH, IAS = 15 A, VDD = 100 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 49 A.

4. Pulsed Id please refer to Figure 11 SOA graph for more details.

5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal &

electro−mechanical application board design.

TYPICAL CHARACTERISTICS

(TJ = 25°C unless otherwise noted)

Figure 1. On Region Characteristics

Figure 2. Normalized On−Resistance

vs. Drain Current and Gate Voltage

VGS = 6 V

VGS = 6.5 V

VGS = 8 V

PULSE DURATION = 80 ms

DUTY CYCLE = 0.5% MAX

VGS = 5 V

VGS = 10 V

300

250

200

150

100

150

200

250

300

VGS = 6 V

PULSE DURATION = 80 ms

DUTY CYCLE = 0.5% MAX

VGS = 6.5 V

VGS = 8 V

VGS = 5 V

VGS = 10 V

VDS, DRAIN TO SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

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