AOD606 datasheet(2/9 Pages) AOSMD

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AOD606

Symbol

Min

Typ

Max

Units

BVDSS

TJ=55°C

IGSS

100

VGS(th)

2.3

ID(ON)

TJ=125°C

mΩ

gFS

VSD

0.76

Ciss

404

Coss

Crss

2.7

Ω

Qg(10V)

9.2

Qg(4.5V)

4.5

Qgs

1.6

Qgd

2.6

tD(on)

3.5

6ns

tD(off)

13.2

3.5

trr

22.9

Qrr

18.3

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Body Diode Reverse Recovery Time

Drain-Source Breakdown Voltage

On state drain current

ID=10mA, VGS=0V

VGS=10V, VDS=5V

VGS=10V, ID=8A

Reverse Transfer Capacitance

IF=8A, dI/dt=100A/µs

VGS=0V, VDS=20V, f=1MHz

SWITCHING PARAMETERS

N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

IDSS

Gate Threshold Voltage

VDS=VGS, ID=250µA

VDS=32V, VGS=0V

VDS=0V, VGS=±20V

Zero Gate Voltage Drain Current

Gate-Body leakage current

RDS(ON)

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

mΩ

VGS=4.5V, ID=6A

IS=1A, VGS=0V

VDS=5V, ID=8A

Gate resistance

VGS=0V, VDS=0V, f=1MHz

Turn-Off Fall Time

Total Gate Charge

VGS=10V, VDS=20V, ID=8A

Gate Source Charge

Gate Drain Charge

Total Gate Charge

Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/µs

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

Turn-On DelayTime

DYNAMIC PARAMETERS

Turn-On Rise Time

Turn-Off DelayTime

VGS=10V, VDS=20V, RL=2.5Ω,

RGEN=3Ω

A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The

Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on

the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.

B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.

D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a

maximum junction temperature of T J(MAX)=175°C.

G. The maximum current rating is limited by bond-wires.

H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA

curve provides a single pulse rating.

Rev 0: January 2006

Alpha & Omega Semiconductor, Ltd.

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