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BVSS84L Datasheet(PDF) 2 Page - ON Semiconductor

Part # BVSS84L
Description  MOSFET - Power, Single P-Channel, SOT-23 -50 V, 10
PDF  5 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

BVSS84L Datasheet(HTML) 2 Page - ON Semiconductor

  BVSS84L Datasheet HTML 1Page - ON Semiconductor BVSS84L Datasheet HTML 2Page - ON Semiconductor BVSS84L Datasheet HTML 3Page - ON Semiconductor BVSS84L Datasheet HTML 4Page - ON Semiconductor BVSS84L Datasheet HTML 5Page - ON Semiconductor  
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BSS84L, BVSS84L, SBSS84L
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = −250 mAdc)
V(BR)DSS
−50
−
−
Vdc
Zero Gate Voltage Drain Current
(VDS = −25 Vdc, VGS = 0 Vdc)
(VDS = −50 Vdc, VGS = 0 Vdc)
(VDS = −50 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
−
−
−
−
−
−
−0.1
−15
−60
mAdc
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
−
−
±10
nAdc
ON CHARACTERISTICS (Note 2)
Gate−Source Threaded Voltage (VDS = VGS, ID = −250 mA)
VGS(th)
−0.9
−
−2.0
Vdc
Static Drain−to−Source On−Resistance (VGS = −5.0 Vdc, ID = −100 mAdc)
RDS(on)
−
4.7
10
W
Transfer Admittance (VDS = −25 Vdc, ID = −100 mAdc, f = 1.0 kHz)
|yfs|
50
−
−
mS
DYNAMIC CHARACTERISTICS
Input Capacitance
VDS = 5.0 Vdc
Ciss
−
36
−
pF
Output Capacitance
VDS = 5.0 Vdc
Coss
−
17
−
Transfer Capacitance
VDG = 5.0 Vdc
Crss
−
6.5
−
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
VDD = −15 Vdc, ID = −2.5 Adc,
RL = 50 W
td(on)
−
3.6
−
ns
Rise Time
tr
−
9.7
−
Turn−Off Delay Time
td(off)
−
12
−
Fall Time
tf
−
1.7
−
Gate Charge
VDD = −40 Vdc, ID = −0.5 A,
VGS = −10 V
QT
−
2.2
−
nC
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Current
IS
−
−
−0.130
A
Pulsed Current
ISM
−
−
−0.520
Forward Voltage (Note 3)
VGS = 0 V, IS = −130 mA
VSD
−
−
−2.2
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
TYPICAL ELECTRICAL CHARACTERISTICS
0
0.3
0.4
0.1
0.6
0.2
Figure 1. Transfer Characteristics
1
1.5
2
2.5
3
-VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. On−Region Characteristics
VDS = 10 V
150
°C
25
°C
-55
°C
02
4
10
0
0.15
0.2
-VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
6
0.05
8
0.3
0.1
3.5
0.5
0.25
13
9
57
-3.25 V
-2.75 V
-2.25 V
-2.5 V
-3.0 V
VGS = -3.5 V
4
0.35
0.4
0.5
0.45
TJ = 25°C



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