9.3.3.2 ESD Protection

All pins support HBM ESD protection level up to ±2 kV, which helps protect the devices from ESD events during

the manufacturing process.

9.3.3.3 Latch-Up Immunity

Latch-up is a condition where a low impedance path is created between a supply pin and ground. This condition

is caused by a trigger (current injection or overvoltage), but once activated the low impedance path remains

even after the trigger is no longer present. This low impedance path may cause system upset or catastrophic

damage due to excessive current levels. The latch-up condition typically requires a power cycle to eliminate the

low impedance path.

In the TMUX821x devices, an insulating oxide layer is placed on top of the silicon substrate to prevent any

parasitic junctions from forming. As a result, the devices are latch-up immune under all circumstances by device

construction.

The TMUX821x devices are constructed on silicon on insulator (SOI) based process where an oxide layer is

added between the PMOS and NMOS transistor of each CMOS switch to prevent parasitic structures from

forming. The oxide layer is also known as an insulating trench and prevents triggering of latch up events due

to overvoltage or current injections. The latch-up immunity feature allows the TMUX821x to be used in harsh

environments. For more information on latch-up immunity refer to Using Latch Up Immune Multiplexers to Help

Improve System Reliability.

9.3.4 1.8 V Logic Compatible Inputs

The TMUX821x devices have 1.8 V logic compatible control for all logic control inputs. 1.8 V logic level inputs

allows the TMUX821x to interface with processors that have lower logic I/O rails and eliminates the need for an

external translator, which saves both space and BOM cost. For more information on 1.8 V logic implementations

refer to Simplifying Design with 1.8 V logic Muxes and Switches.

9.3.5 Integrated Pull-Down Resistor on Logic Pins

The TMUX821x have internal weak pull-down resistors to GND to ensure the logic pins are not left floating. The

value of this pull-down resistor is approximately 4 MΩ, but is clamped to 1 µA at higher voltages. This feature

integrates up to four external components and reduces system size and cost.

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TMUX8212

SCDS434A – OCTOBER 2021 – REVISED DECEMBER 2021

Copyright © 2021 Texas Instruments Incorporated

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