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ARF476FL Datasheet(PDF) 3 Page - Microchip Technology

Part # ARF476FL
Description  500 V, 900 W, 128 MHz RF Power MOSFET
PDF  14 Pages
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Manufacturer  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

ARF476FL Datasheet(HTML) 3 Page - Microchip Technology

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Table 1-3. Thermal Characteristics (per side)
Symbol
Characteristic
Min
Typ
Max
Unit
RθJC
Junction-to-case thermal resistance
0.15
0.165
°C/W
RθJHS
Junction-to-sink thermal resistance (Use
high-efficiency thermal grease and
planar heat sink surface.)
0.30
0.33
The following table shows the dynamic characteristics of the ARF476FL device. TC = 25 °C unless otherwise
specified.
Table 1-4. Dynamic Characteristics (per Section)
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input capacitance
VGS = 0 V, VDS = 50 V, f = 1 MHz
740
830
pF
Coss
Output capacitance
125
130
Crss
Reverse transfer
capacitance
7
9
td(on)
Turn-on delay time
VGS = 15 V, VDD = 250 V, ID =
ID[Cont.] at 25 °C, Rg = 1.6 Ω
5.1
10
ns
tr
Rise time
4.1
8
td(off)
Turn-off delay time
12
18
tf
Fall time
4.0
7
The following table shows the functional characteristics of the ARF476FL device. TC = 25 °C unless otherwise
specified.
Table 1-5. Functional Characteristics (Push-Pull Configuration)
Parameter Characteristic
Test Conditions
Min
Typ
Max
Unit
GPS
Common source
amplifier power gain
f = 128 MHz, VDD = 150 V, IDQ =
15 mA, Pout = 900 W, PW = 3 ms,
10% duty cycle
14
16
dB
η
Drain efficiency
50
55
%
Ψ
Electrical
ruggedness VSWR
5:1
No degradation in output power
ARF476FL
Device Specifications
© 2022 Microchip Technology Inc.
and its subsidiaries
Datasheet
DS00004436A-page 3



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