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SPC584B64E3 Datasheet(PDF) 23 Page - STMicroelectronics

Part # SPC584B64E3
Description  32-bit Power Architecture microcontroller for automotive ASIL-B applications
PDF  142 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

SPC584B64E3 Datasheet(HTML) 23 Page - STMicroelectronics

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DS11701 Rev 4
23/142
SPC584Bx
Electrical characteristics
25
4.7
Device consumption
Table 8. Device consumption
Symbol
C
Parameter
Conditions
Value(1)
Unit
Min
Typ
Max
IDD_LKG(2),(3)
CC
C
Leakage current on the
VDD_LV supply
TJ =40°C
—
—
7
mA
DTJ =25°C
—
1.5
5
DTJ =55°C
—
—
10
DTJ =95°C
—
—
25
DTJ = 120 °C
—
—
45
PTJ = 150 °C
—
—
90
IDD_LV(3)
CC
P
Dynamic current on
the VDD_LV supply,
very high consumption
profile(4)
—
—
—
125
mA
IDD_HV
CC
P
Total current on the
VDD_HV supply(4)
fMAX
——
55
mA
IDD_LV_GW
CC
T
Dynamic current on
the VDD_LV supply,
gateway profile(5)
——
—
98
mA
IDD_HV_GW
CC
T
Dynamic current on
the VDD_HV supply,
gateway profile(5)
——
—
22
mA
IDD_LV_BCM
CC
T
Dynamic current on
the VDD_LV supply,
body profile(6)
——
—
79
mA
IDD_HV_BCM
CC
T
Dynamic current on
the VDD_HV supply,
body profile(6)
——
—
29
mA
IDD_HSM_AC
CC
T
HSM platform dynamic
operating current(7)
fMAX/2
—
—
15
mA
IDDHALT(8)
CC
T
Dynamic current on
the VDD_LV supply
+Total current on the
VDD_HV supply
—
—
54
63
mA
IDDSTOP(9)
CC
T
Dynamic current on
the VDD_LV supply
+Total current on the
VDD_HV supply
—
—
18
24
mA
IDDSTBY8
CC
D
Total standby mode
current on VDD_LV and
VDD_HV supply, 8 KB
RAM(10)
TJ = 25 °C
—
55
120
µA
CTJ = 40 °C
—
—
180
DTJ = 55 °C
—
—
280
DTJ = 120 °C
—
0.8
1.65
mA
PTJ = 150 °C
—
1.8
3.8



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