SPC584B64E3 datasheet(35/142 Pages) STMICROELECTRONICS

35 / 142 page

DS11701 Rev 4

35/142

SPC584Bx

Electrical characteristics

IRMS_V

RMS I/O current for VERY

STRONG configuration

CL =25pF, 50MHz,

VDD = 5.0 V ± 10 %

——

CL =50pF, 25MHz,

VDD = 5.0 V ± 10 %

——

CL =25pF, 50MHz,

VDD = 3.3 V ± 10 %

——

CL =25pF, 25MHz,

VDD = 3.3 V ± 10 %

——

Dynamic consumption(3)

IDYN_SEG

Sum of all the dynamic and DC

I/O current within a supply

segment

VDD = 5.0 V ± 10 %

—

195

VDD = 3.3 V ± 10 %

—

150

IDYN_W

Dynamic I/O current for WEAK

configuration

CL =25pF, VDD =5.0 V ±

10 %

—

16.7

CL =50pF, VDD =5.0 V ±

10 %

—

16.8

CL =25pF, VDD =3.3 V ±

10 %

—

12.9

CL =50pF, VDD =3.3 V ±

10 %

—

12.9

IDYN_M

Dynamic I/O current for

MEDIUM configuration

CL =25pF, VDD =5.0 V ±

10%

—

18.2

CL =50pF, VDD =5.0 V ±

10%

—

18.4

CL =25pF, VDD =3.3 V ±

10 %

—

14.3

CL =50pF, VDD =3.3 V ±

10 %

—

16.4

IDYN_S

Dynamic I/O current for

STRONG configuration

CL =25pF, VDD =5.0 V ±

10 %

——

CL =50pF, VDD =5.0 V ±

10 %

—

63.5

CL =25pF, VDD =3.3 V ±

10 %

——

CL =50pF, VDD =3.3 V ±

10 %

—

33.5

Table 16. I/O consumption (continued)

Symbol

Parameter

Conditions

Value(1)

Unit

Min

Typ

Max

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