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30C02SS Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part # 30C02SS
Description  Low-Frequency General-Purpose Amplifier Applications
PDF  4 Pages
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

30C02SS Datasheet(HTML) 2 Page - Sanyo Semicon Device

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30C02SS
No.7367-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Output Capacitance
Cob
VCB=10V, f=1MHz
3.3
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=200mA, IB=10mA
85
190
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=200mA, IB=10mA
0.9
1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=10µA, IE=0
40
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, RBE=∞
30
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=10µA, IC=0
5V
Turn-ON Time
ton
See specified Test Circuit.
35
ns
Storage Time
tstg
See specified Test Circuit.
255
ns
Fall Time
tf
See specified Test Circuit.
45
ns
Switching Time Test Circuit
VR
RB
VCC=12V
VBE= --5V
+
+
50
Ω
INPUT
OUTPUT
RL
220
µF
470
µF
PW=20
µs
IB1
D.C.
≤1%
IB2
20IB1= --20IB2=IC=300mA
1.0
10
100
1000
3
2
57
3
2
57
3
2
57
1000
100
2
3
5
7
hFE -- IC
IT05084
0
0
500
400
300
700
600
200
200
100
0
300
400
200
800
700
600
500
100
500
1000
800
900
100
300
400
600
700
IC -- VCE
IT05082
0
0.2
0.4
0.6
0.8
1.0
IC -- VBE
IT05083
VCE(sat) -- IC
IT05085
IB=0
200
µA
400
µA
1mA
2mA
3mA
5mA
7mA
10mA
Ta=75
°C
--25
°C
25
°C
VCE=2V
VCE=2V
2
3
5
7
2
3
5
7
10
1.0
100
2
3
5
7
1000
1.0
23
5
10
100
1000
7
2
35
7
2
35
7
75
°C
--25
°C
Ta=25
°C
IC / IB=20
Collector Current, IC -- mA
Collector-to-Emitter Voltage, VCE -- mV
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- mA



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