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STW75N60DM6 Datasheet(PDF) 6 Page - STMicroelectronics |
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STW75N60DM6 Datasheet(HTML) 6 Page - STMicroelectronics |
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6 / 14 page ![]() Figure 7. Capacitance variations GIPG160720181116CVR 10 4 10 3 10 2 10 1 10 0 10 -1 10 0 10 1 10 2 C (pF) VDS (V) CISS COSS CRSS f = 1 MHz Figure 8. Normalized gate threshold voltage vs temperature GIPG160720181105VTH 1.1 1.0 0.9 0.8 0.7 0.6 -75 -25 25 75 125 VGS(th) (norm.) ID =250 μA TJ (°C) Figure 9. Normalized on-resistance vs temperature GIPG160720181114RON 2.5 2.0 1.5 1.0 0.5 0 -75 -25 25 75 125 RDS(on) (norm.) VGS = 10 V TJ (°C) Figure 10. Normalized V(BR)DSS vs temperature GIPG160720181115BDV 1.10 1.05 1.00 0.95 0.90 0.85 -75 -25 25 75 125 V(BR)DSS (norm.) ID = 1 mA TJ (°C) Figure 11. Output capacitance stored energy GADG160720181346EOS 48 40 32 24 16 8 0 0 100 200 300 400 500 600 E (µJ) VDS (V) Figure 12. Source-drain diode forward characteristics GIPG160720181116SDF 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0 10 20 30 40 50 60 70 VSD (V) ISD (A) Tj = -50 °C Tj = 25 °C Tj = 150 °C STW75N60DM6, STWA75N60DM6 Electrical characteristics (curves) DS12280 - Rev 3 page 6/14 |
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