STW75N60DM6 datasheet(3/14 Pages) STMICROELECTRONICS

3 / 14 page

Electrical characteristics

TC = 25 °C unless otherwise specified

Table 4. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0 V, ID = 1 mA

600

IDSS

Zero gate voltage drain current

VGS = 0 V, VDS = 600 V

μA

VGS = 0 V, VDS = 600 V, TJ = 125 °C(1)

100

IGSS

Gate-body leakage current

VDS = 0 V, VGS = ±25 V

±5

μA

VGS(th)

Gate threshold voltage

VDS = VGS, IC = 250 μA

3.25

4.75

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID= 36 A

mΩ

1. Defined by design, not subject to production test.

Table 5. Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz, VGS = 0 V

4850

Coes

Output capacitance

380

Crss

Reverse transfer capacitance

3.5

Coss eq.(1)

Equivalent output capacitance

VDS = 0 to 480 V, VGS = 0 V

771

Intrinsic gate resistance

f = 1 MHz, ID = 0 A

2.3

Total gate charge

VDD = 480 V, ID = 72 A, VGS = 0 to

10 V (see Figure 14. Test circuit for gate

charge behavior)

117

Qgs

Gate-source charge

Qgd

Gate-drain charge

1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0

to 80% VDSS

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 300 V, ID = 36 A, RG = 4.7 Ω

(see Figure 13. Test circuit for resistive

load switching times and

Figure 18. Switching time waveform

Rise time

107

td(off)

Turn-off delay time

102

Current fall time

STW75N60DM6, STWA75N60DM6

Electrical characteristics

DS12280 - Rev 3

page 3/14

STW75N60DM6 Datasheet(PDF) 3 Page - STMicroelectronics

STW75N60DM6 Datasheet(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14

Datasheet Download

Link URL