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NBP8 Datasheet(PDF) 39 Page - NXP Semiconductors |
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NBP8 Datasheet(HTML) 39 Page - NXP Semiconductors |
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39 / 58 page ![]() NXP Semiconductors NBP8 Battery pressure monitor sensor Bit 7 6 5 4 3 2 1 0 POR or User Reset ($00) 0 0 0 0 0 0 0 0 Table 46. Pressure FIFO (PFIFOH/Lx) (addresses $0076 - $008D)...continued Fields Description 15 to 8 PFIFOHx[15:8] 7 to 0 PFIFOLx[7:0][1] The PFIFO stores the 12 latest pressure measurements. The PFIFO is implemented as a rolling buffer: the most recent pressure measurement overwrites the oldest one. The INDFIFO index holds the value of the last address written. Each entry shall occupy two bytes, high byte at first address and low byte at second address, for a total of 24 bytes. Table 47. PFIFOH/Lx fields description [1] Where x = 1 to 12. 7 Limiting values Limiting values are the extreme limits the device can be exposed to without permanently damaging it. The device contains circuitry to protect the inputs against damage from high static voltages; however, do not apply voltages higher than the values shown in Table 48. Keep VIN and VOUT within the range VSS ≤ (VIN or VOUT) ≤ VDD. Symbol Parameter Conditions Min Typ Max Unit Notes VDD VDD or VDDA to VSS TL ≤ TA ≤ Th –0.3 — 3.8 V C VIO IO pin current, each pin vs VDD / VDDA or VSS TAS Min ≤ TA ≤ TA Max Vss – 0.3 — Vdd + 0.3 V C IIO IO pin current, pin vs VDD / VDDA or VSS TL ≤ TA ≤ TH, VDDR Min ≤ VDD ≤ VDDR Max –10 — 10 mA C ISUBIO Substrate current injection, all IO pins current from pin to VSS – 0.3 V TL ≤ TA ≤ TH, VDDR Min ≤ VDD ≤ VDDR Max — 600 — µA C ILATCH Latch-up current, current to/from pin to VDD / VDDA + 0.3 V TL ≤ TA ≤ TH, VDDR Min ≤ VDD ≤ VDDR Max –100 — 100 mA C ESDHBM Electrostatic discharge, human body model (HBM), all pins TA = 25 °C, VDD = 3.0 V –2000 — 2000 V C ESDCDM Electrostatic discharge, charged device model (CDM), all pins TA = 25 °C, VDD = 3.0 V –500 — 500 V C TSTG Unpowered storage, temperature range — –50 — 150 °C C Table 48. Maximum ratings 8 Recommended operating conditions The limits normally expected in the application that define the range of operation. Symbol Parameter Conditions Min Typ Max Unit Notes VDDR Operating voltage range, Parameter register retention where Min = VL, Typ = 3.0 V, Max = VH TAS Min ≤ TA ≤ TAS Max 1.2 3.0 3.6 V C Table 49. Operating range NBP8 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2022. All rights reserved. Product data sheet Rev. 2.4 — 11 March 2022 39 / 58 |
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