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NTS0102GD Datasheet(PDF) 14 Page - NXP Semiconductors |
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NTS0102GD Datasheet(HTML) 14 Page - NXP Semiconductors |
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14 / 38 page ![]() NXP Semiconductors NTS0102 Dual supply translating transceiver; open-drain; auto direction sensing 001aam491 1.8 V SYSTEM CONTROLLER 3.3 V SYSTEM 1.8 V 3.3 V 0.1 µF 0.1 µF 1 µF VCC(A) OE A1 DATA DATA NTS0102 A2 B1 B2 VCC(B) Figure 9. Typical operating circuit 13.2 Architecture The architecture of the NTS0102 is shown in Figure 10. The device does not require an extra input signal to control the direction of data flow from A to B or B to A. 001aal965 VCC(A) VCC(B) A B 10 kΩ 10 kΩ T1 T3 T2 ONE SHOT ONE SHOT GATE BIAS Figure 10. Architecture of NTS0102 I/O cell (one channel) The NTS0102 is a "switch" type voltage translator, it employs two key circuits to enable voltage translation: 1. A pass-gate transistor (N-channel) that ties the ports together. 2. An output edge-rate accelerator that detects and accelerates rising edges on the I/O pins. The gate bias voltage of the pass gate transistor (T3) is set at approximately one threshold voltage above the VCC level of the low-voltage side. During a LOW-to-HIGH transition, the output one-shot accelerates the output transition by switching on the PMOS transistors (T1, T2) bypassing the 10 kΩ pull-up resistors and increasing current drive capability. The one-shot is activated once the input transition reaches approximately VCCI/2; it is de-activated approximately 50 ns after the output reaches VCCO/2. During the acceleration time, the driver output resistance is between approximately 50 Ω and 70 Ω. To avoid signal contention and minimize dynamic ICC, the user should wait for the one- shot circuit to turn-off before applying a signal in the opposite direction. Pull-up resistors are included in the device for DC current sourcing capability. NTS0102 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2022. All rights reserved. Product data sheet Rev. 4.3 — 20 April 2022 14 / 38 |
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