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SAMWIN
SW7N60
REV0.2
04.11.1
2/6
Electrical Characteristics (Tc=25
℃
unless otherwise noted)
-
13
-
Gate-Drain Charge (Miller Charge)
Q
gd
-
6.5
-
Gate-Source Charge
Q
gs
nc
-
30
-
V
DS=480V,VGS=10V, ID=7.0A
(Note4,5)
Total Gate Charge
Q
g
100
52
-
Fall Time
t
f
240
80
-
Turn-off Delay Time
t
d(off)
130
79
-
Rise Time
t
r
ns
70
35
-
V
DD=300V,ID=7.0A
(Note4,5)
Turn-on Delay Time
t
d(on)
Switching Characteristics
25
18
-
Reverse Transfer Capacitance
Crss
190
150
-
Output Capacitance
Coss
pF
1500
1200
-
V
GS=0V,VDS=25V, f=1MHz
Input Capacitance
Ciss
Dynamic Characteristics
ohm
1
0.85
-
V
GS=10V,ID=3.5A
Static Drain-Source On-state
Resistance
R
DS(ON)
V
5.0
-
3.0
V
DS=VGS,ID=250uA
Gate Threshold Voltage
V
GS(th)
On Characteristics
nA
-100
-
-
V
GS=-30V, VDS=0V
Gate-Source Leakage Reverse
nA
100
-
-
V
GS=30V,VDS=0V
Gate-Source Leakage Current
I
GSS
V
DS=480V, Tc=125
℃
uA
1
-
-
V
DS=600V, VGS=0V
Drain-Source Leakage Current
I
DSS
V/
℃
-
0.67
-
I
D=250uA,referenced to 25
℃
Breakdown Voltage Temperature
coefficient
△
BV
DSS/
△
Tj
V
-
-
600
V
GS=0V,ID=250uA
Drain- Source Breakdown Voltage
BV
DSS
Off Characteristics
Max
Typ
Min
Units
Value
Test Conditions
Parameter
Symbol
Source-Drain Diode Ratings and Characteristics
uc
-
2.4
-
Reverse Recovery Charge
Q
rr
ns
-
320
-
I
S=7.0A,VGS=0V,
dI
F/dt=100A/us
Reverse Recovery Time
t
rr
V
1.4
-
-
I
S=7.0A,VGS=0V
Diode Forward Voltage
V
SD
28
-
-
Pulsed Source Current
I
SM
A
7
-
-
Integral Reverse
p-n Junction Diode
in the MOSFET
Continuous Source Current
I
S
Unit.
Max.
Typ.
Min.
Test Conditions
Parameter
Symbol
※
NOTES
1. Repeativity rating: pulse width limited by junction temperature
2. L=19.5mH,I
AS=7.0A,VDD=50V,RG=0ohm, Starting TJ=25
℃
3. ISD
≤
7.0A,di/dt
≤
100A/us,V
DD
≤
BV
DSS, Starting TJ=25
℃
4. Pulse Test: Pulse Width
≤
300us,Duty Cycle
≤
2%
5. Essentially independent of operating temperature.
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