SAMWIN
SW7N60
REV0.2
04.11.1
Features
N-Channel MOSFET
BV
DSS (Minimum)
R
DS(ON) (Maximum)
I
D
Qg (Typical)
P
D (@TC=25
℃
)
General Description
This power MOSFET is produced in CHMC with
advanced VDMOS process, planar stripe. This
technology enable power MOSFET to have better
characteristics, such as fast switching time, low on
resistance, low gate charge and especially excellent
avalanche characteristics. This power MOSFET is
usually used at high efficient DC to DC converter
block and switch mode power supply.
Absolute Maximum Ratings
℃
300
Maximum Lead Temperature for soldering purpose, 1/8 from Case
for 5 seconds.
T
L
℃
-55~+150
Operating junction temperature &Storage temperature
T
STG,TJ
W/
℃
1.14
Derating Factor above 25
℃
W
142
Total Power Dissipation (@Tc=25
℃
)
P
D
V/ns
4.5
Peak Diode Recovery dv/dt
(Note 3)
dv/dt
mJ
14.2
Repetitive Avalanche Energy
(Note 1)
E
AR
mJ
530
Single Pulsed Avalanche Energy
(Note 2)
E
AS
V
±
30
Gate to Source Voltage
V
GS
A
28
Drain Current Pulsed
(Note 1)
I
DM
A
4.7
Continuous Drain Current (@Tc=100
℃
)
A
7
Continuous Drain Current (@Tc=25
℃
)
I
D
V
600
Drain to Source Voltage
V
DSS
Units
Value
Parameter
Symbol
Thermal Characteristics
℃
/ W
62.5
-
-
Thermal Resistance, Junction-to-Ambient
R
è
JA
℃
/ W
0.5
-
Thermal Resistance, Case-to-Sink
R
è
CS
℃
/ W
0.88
-
-
Thermal Resistance, Junction-to-Case
R
è
JC
Max
Typ
Min
Units
Value
Parameter
Symbol
1/6
: 600 V
: 1 ohm
: 7.0 A
: 30 nc
: 142 W
G
S
D
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