SW7N60 datasheet(3/6 Pages) ETC1

3 / 6 page

SAMWIN

SW7N60

REV0.2

04.11.1

3/6

Fig 1. On-State Characteristics

Fig 3. On Resistance Variation vs.

Drain Current and Gate Voltage

Fig 4. On State Current vs.

Allowable Case Temperature

Fig 2. Transfer Characteristics

Fig 6. Gate Charge Characteristics

Fig 5. Capacitance Characteristics

(Non-Repetitive)

0.1

150

 Note:

1.V

=50V

2.250us pulse test.

, Gate-Source Voltage [V]

0.0

0.5

1.0

1.5

2.0

2.5

=10V

=20V

 Note:T

=25

, Drain Current[A]

0.2

0.4

0.6

0.8

1.0

1.2

0.1

150

,Source-Drain Voltage[V]

Note:

1.v

=0v

2.250us test

Note:I

=7A

,Total Gate Charge [nC]

=480V

=300V

=120V

0.1

 Note:

1.250us pulse test

2.T

25oC

,Drain-to-Source voltage [V]

VGS

top:10V

7.5V

6.5V

5.5V

bottom:5.5V

0.1

400

800

1200

1600

2000

,Drain-Source Voltage [V]

rss

oss

iss

 Note:

1.V

=0V

2.f=1MHz.

Ciss = Cgs+Cgd(Cds=shorted)

Coss= Cds+Cgd

Crss = Cgd

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