NSS1002CL datasheet(1/7 Pages) ONSEMI

Part #	NSS1002CL

Description	Bipolar Transistor 100 V, 2.5 A, Low VCE(sat) NPN Single LFPAK

PDF	7 Pages

Scroll/Zoom	100%

Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

Logo

1 / 7 page

DATA SHEET

www.onsemi.com

February, 2022 − Rev. 0

1

Publication Order Number:

NSS1002CL/D

Bipolar Transistor

100 V, 2.5 A, Low VCE(sat) NPN

Single LFPAK

NSS1002CL

This device is bipolar junction transistor featuring high current, low

saturation voltage, and high speed switching.

Suitable for automotive applications. AEC−Q101 qualified and

PPAP capable. (NSVS1002CLTWG)

Features

• Complement to NSS1001CL

• Large Current Capacitance

• Low Collector to Emitter Saturation Voltage

• Thin Profile LFPAK8 3.3 x 3.3 mm Package

• High−Speed Switching

• High Allowable Power Dissipation

• AEC−Q101 Qualified and PPAP Capable (NSVS1002CLTWG)

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Typical Applications

• Load Switch

• Gate Driver Buffer

• DC−DC Converters

Specifications

ABSOLUTE MAXIMUM RATING at Ta = 25°C

Parameter

Symbol

Value

Unit

Collector−to−Base Voltage

VCBO

120

V

Collector−to−Emitter Voltage

VCEO

100

V

Emitter−to−Base Voltage

VEBO

6.5

V

Collector Current

IC

2.5

A

Collector Current (Pulse)

ICP

4

A

Collector Dissipation

PC (Note 1)

0.8

W

PC (Note 2)

2.2

Junction Temperature

TJ

175

°C

Storage Temperature Range

Tstg

−55 to +175

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Mounted on FRB with minimum pad of Copper 2 oz

2. Mounted on FRB with 1 in/sq pad of Copper 2 oz

MARKING DIAGRAM

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

LFPAK8 3.3x3.3, 0.65P

CASE 760AD

ELECTRICAL CONNECTION

NSS1002 = Specific Device Code

A

= Assembly Location

WL

= Wafer Lot

Y

= Year

W

= Work Week

G

= Pb−Free Package

NSS

1002G

AWLYW

Similar Part No. - NSS1002CL

Manufacturer	Part #	Datasheet	Description
ON Semiconductor	NSS1001CL	384Kb / 7P	Bipolar Transistor -100 V, -2.5 A, Low VCE(sat) PNP Single LFPAK February, 2022 ??Rev. 0
ON Semiconductor	NSS1001CLTWG	384Kb / 7P	Bipolar Transistor -100 V, -2.5 A, Low VCE(sat) PNP Single LFPAK February, 2022 ??Rev. 0

More results

Similar Description - NSS1002CL

Manufacturer	Part #	Datasheet	Description
ON Semiconductor	NSS1C201LT1G	107Kb / 5P	100 V, 3.0 A, Low VCE(sat) NPN Transistor September, 2008 ??Rev. 0
	NSS1C201MZ4	122Kb / 6P	100 V, 2.0 A, Low VCE(sat) NPN Transistor November, 2008 ??Rev. 0
	NSS40301MZ4	114Kb / 6P	Bipolar Power Transistors 40 V, 3.0 A, Low VCE(sat) NPN Transistor September, 2010 ??Rev. 1
	NSS1C301ET4G	83Kb / 5P	100 V, 3.0 A, Low VCE(sat) NPN Transistor September, 2013 ??Rev. 3
	NSS1C201L	78Kb / 6P	100 V, 3.0 A, Low VCE(sat) Transistor December, 2014 ??Rev. 5
	NSS1C201MZ4	106Kb / 6P	100 V, 2.0 A, Low VCE(sat) NPN Transistor September, 2010 ??Rev. 2
	NSS1C301ET4G	116Kb / 5P	100 V, 3.0 A, Low VCE(sat) NPN Transistor January, 2014 ??Rev. 4
	NSS1001CL	384Kb / 7P	Bipolar Transistor -100 V, -2.5 A, Low VCE(sat) PNP Single LFPAK February, 2022 ??Rev. 0
	NSVS50030SB3	169Kb / 7P	Bipolar Transistor (-)50 V, (-)3 A, Low VCE(sat), (PNP)NPN Single December, 2018 ??Rev. 1
	NSV1C300CT	292Kb / 7P	Bipolar Power Transistors 100 V, 3.0 A, Low VCE(sat) PNP Transistor February, 2021 - Rev. 0

More results

NSS1002CL Datasheet(PDF) 1 Page - ON Semiconductor

NSS1002CL Datasheet(HTML) 1 Page - ON Semiconductor

Similar Part No. - NSS1002CL

Similar Description - NSS1002CL

Html Pages

1 2 3 4 5 6 7

Datasheet Download

Link URL