NSS1002CL

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2

Parameter

Symbol

Conditions

Value

Unit

Min

Typ

Max

Collector Cutoff Current

VCB = 120 V

IE = 0 A

0.1

mA

Emitter Cutoff Current

VEB = 6.5 V

IC = 0 A

0.1

mA

DC Current Gain

VCE = 5 V

IC = 100 mA

140

400

Gain−Bandwidth Product

VCE = 10 V

IC = 100 mA

200

MHz

Output Capacitance

VCB = 10 V

f = 1 MHz

12

pF

Collector−to−Emitter Saturation Voltage

IC = 100 mA

IB = 10 mA

0.018

0.036

V

IC = 1 A

IB = 100 mA

0.08

0.15

V

IC = 2.5 A

IB = 250 mA

0.18

0.36

V

Base−to−Emitter Saturation Voltage

IC = 1 A

IB = 100 mA

0.85

1.2

V

Collector−to−Base Breakdown Voltage

IC = 10 mA, IE = 0 A

120

V

Collector−to−Emitter Breakdown Voltage

IC = 1 mA, RBE = ∞

100

V

Emitter to Base Breakdown Voltage

IE = 10 mA, IC = 0 A

6.5

V

Turn−On Time

See Figure 1

15

ns

Storage Time

790

ns

Fall Time

46

ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

Figure 1. Switching Time Test Circuit

ESD RATING

Parameter

Symbol

Value

Unit

Class

Electrostatic Discharge − Human Body Model

HBM

>2000, <4000

V

2

Electrostatic Discharge − Machine Model

MM

>400

V

M4