MPC5643L datasheet(90/136 Pages) NXP

90 / 136 page

MPC5643L Microcontroller Data Sheet, Rev. 10

Electrical characteristics

NXP Semiconductors

3.11

Temperature sensor electrical characteristics

3.12

Main oscillator electrical characteristics

The device provides an oscillator/resonator driver. Figure 5 describes a simple model of the internal oscillator driver and

provides an example of a connection for an oscillator or a resonator.

IDD_HV_OSC

(oscillator

bypass mode)

T Operating current

TJ = 150 °C

3.3 V supplies

120 MHz

—

900

μA

IDD_HV_OSC

(crystal

oscillator mode)

D Operating current

TJ = 150 °C

3.3 V supplies

120 MHz

——

3.5

IDD_HV_FLASH

T Operating current

TJ = 150 °C

3.3 V supplies

120 MHz

——

IDD_HV_PMU

T Operating current

TJ = 150 °C

3.3 V supplies

120 MHz

——

1 Devices configured for DPM mode, single core only with Core 0 executing typical code at 120 MHz from SRAM and Core 1 in

reset. If core execution mode not specified, the device is configured for LSM mode with both cores executing typical code at

120 MHz from SRAM.

2 Enabled Modules in 'Typical mode': FlexPWM0, ETimer0/1/2, CTU, SWG, DMA, FlexCAN0/1, LINFlex, ADC1, DSPI0/1, PIT,

CRC, PLL0/1, I/O supply current excluded. If DPM mode is configured, Core_0 is active while Core_1 is in reset during the

measurements.

3 Internal structures hold the input voltage less than VDDA + 1.0 V on all pads powered by VDDA supplies, if the maximum

injection current specification is met and VDDA is within the operating voltage specifications.

4 This value is the total current for both ADCs.

5 VFLASH is only available in the calibration package.

Table 21. Temperature sensor electrical characteristics

Symbol

Parameter

Conditions

Min

Max

Unit

—

Accuracy

TJ = –40 °C to 150 °C

–10

°C

Minimum sampling period

—

µs

Table 20. Current consumption characteristics (continued)

Symbol

Parameter

Conditions1

Min

Typ

Max

Unit

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