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Document Number: 93184

8

Revision: 19-May-10

T40HFL, T70HFL, T85HFL Series

Vishay Semiconductors

Fast Recovery Diodes

(T-Modules), 40 A/70 A/85 A

Fig. 25 - Recovery Time Characteristics

Fig. 26 - Recovery Charge Characteristics

Fig. 27 - Recovery Current Characteristics

Fig. 28 - Recovery Time Characteristics

Fig. 29 - Recovery Charge Characteristics

Fig. 30 - Recovery Current Characteristics

1

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

0

0

1

0

1

100A

50A

200A

Ra te Of Fa ll Of Forwa rd Current - d i/ d t (A/ µs)

I

= 300A

FM

T40HFL..S10

T70HFL..S10

T = 125 °C

J

5

10

15

20

25

30

35

40

10 20 30 40 50 60 70 80 90 100

100A

50A

200A

Ra te Of Fa ll Of Forward Current - d i/ d t (A/ µs)

I

= 300A

FM

T40HFL..S10

T70HFL..S10

T = 125 °C

J

10

15

20

25

30

35

40

45

10 20 30 40 50 60 70 80 90 100

100A

50A

200A

Ra te Of Fa ll Of Forwa rd Current - di/ d t (A/ µs)

I

= 300A

FM

T40HFL..S10

T70HFL..S10

T = 125 °C

J

0.6

0.7

0.8

0.9

1

1.1

1.2

0

0

1

0

1

100A

50A

200A

Ra te Of Fa ll Of Forwa rd Current - di/ dt (A/ µs)

T85HFL..S02

T = 125°C

I

= 300A

J

FM

5

10

15

20

25

10 20 30 40 50 60 70 80 90 100

200A

100A

50A

Ra te Of Fa ll Of Forward Current - di/ d t (A/ µs)

T85HFL..S02

T = 125 °C

I

= 300A

J

FM

6

8

10

12

14

16

18

20

22

24

26

28

10 20 30 40 50 60 70 80 90 100

200A

100A

50A

Ra te Of Fall Of Forwa rd Current - di/ d t (A/ µs)

T85HFL..S02

T = 125°C

I

= 300A

J

FM