1008 datasheet(2/16 Pages) FREESCALE

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RF Device Data

Freescale Semiconductor

MW4IC001NR4 MW4IC001MR4

Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Current

(VDS = 65 Vdc, VGS = 0 Vdc)

IDSS

—

µAdc

Zero Gate Voltage Drain Current

(VDS = 28 Vdc, VGS = 0 Vdc)

IDSS

—

µAdc

Gate-Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

IGSS

—

µAdc

On Characteristics

Gate Threshold Voltage

(VDS = 10 V, ID = 50 µA)

VGS(th)

Vdc

Gate Quiescent Voltage

(VDS = 28 V, ID = 10 mA)

VGS(Q)

3.7

Vdc

Drain-Source On-Voltage

(VGS = 10 V, ID = 0.05 A)

VDS(on)

—

0.48

0.9

Vdc

Forward Transconductance

(VDS = 10 V, ID = 0.1 A)

gfs

—

0.05

—

Dynamic Characteristics

Output Capacitance

(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Coss

—

Reverse Transfer Capacitance

(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Crss

—

0.62

—

Functional Tests (In Freescale Test Fixture, 50 ohm system)

Two-Tone Common Source Amplifier Power Gain

(VDD = 28 Vdc, Pout = 0.9 W PEP, IDQ = 12 mA,

f = 2170 MHz, Tone Spacing = 100 kHz)

Gps

—

Two-Tone Drain Efficiency

(VDD = 28 Vdc, Pout = 0.9 W PEP, IDQ = 12 mA,

f = 2170 MHz, Tone Spacing = 100 kHz)

ηD

—

Third Order Intermodulation Distortion

(VDD = 28 Vdc, Pout = 0.9 W PEP, IDQ = 12 mA,

f = 2170 MHz, Tone Spacing = 100 kHz)

IMD

—

-28

—

dBc

Input Return Loss

(VDD = 28 Vdc, Pout = 0.9 W PEP, IDQ = 12 mA,

f = 2170 MHz, Tone Spacing = 100 kHz)

IRL

—

-18

—

Output Power, 1 dB Compression Point, CW

(VDD = 28 Vdc, IDQ = 12 mA, f = 2170 MHz)

P1dB

—

0.85

—

Common-Source Amplifier Power Gain

(VDD = 28 Vdc, Pout = 0.9 W CW, IDQ = 12 mA, f = 2170 MHz)

Gps

—

Drain Efficiency

(VDD = 28 Vdc, Pout = 0.9 W CW, IDQ = 12 mA, f = 2170 MHz)

ηD

—

Input Return Loss

(VDD = 28 Vdc, Pout = 0.9 W CW, IDQ = 12 mA, f = 2170 MHz)

IRL

-10

-16

—

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