ACE14805B datasheet(3/7 Pages) ACE

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ACE14805B

Dual P-Channel Enhancement Mode Power MOSFET

VER 1.2

Electrical Characteristics

TA=25℃, unless otherwise specified.

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static

Drain-Source

Breakdown

Voltage

V(BR)DSS)

VGS = 0V, ID = -250 uA

-30

Zero Gate Voltage

Drain Current

IDSS

VDS= -30 V, VGS= 0V

-1

Gate Threshold

Voltage

VGS(TH)

VGS = 0V, IDS = -250 uA

-1

-1.4

-3

Gate Leakage

Current

IGSS

VGS= ±20 V, VDS= 0V

±100

Drain-Source

On-state

Resistance

RDS(on)

VGS = -10 V, ID =-7 A

mΩ

VGS = -4.5 V, ID = -5A

Forward

Transconductance

gFs

VDS = -10V, ID = -7A

Diode Forward

Voltage

VSD

ISD=-1A, VGS = 0 V

-1.2

Diode Forward

Current

TC=25℃

-2.1

Switching

Total Gate Charge

GS= -4.5 V, VDS = -15V, ID= -7 A

16.4

Gate-Source

Charge

5.8

Gate-Drain

Charge

6.5

Turn-On Delay

Time

d(on)

DD= -10V, VGS=-10V, ID = -7 A,

GEN= 6Ω

Turn-On Rise

Time

Turn-Off Delay

Time

d(off)

105

Turn-Off Fall Time

Dynamic

Input Capacitance

Ciss

VDS= -15V,VGS=0V, f=1.0MHz

2020

Output

Capacitance

Coss

395

Reverse Transfer

Capacitance

Crss

202

Note :

a. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still

air environment with TA=25°C. The value in any given application depends on the user's specific

board design.

b. Repetitive rating, pulse width limited by junction temperature.

The current rating is based on the t≤ 10s junction to ambient thermal resistance rating

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