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ACE14805B Datasheet(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE14805B Datasheet(HTML) 1 Page - ACE Technology Co., LTD. |
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1 / 7 page  ACE14805B Dual P-Channel Enhancement Mode Power MOSFET VER 1.2 1 Description Load switch PWM applications Features VDS=-30V ID=-8A RDS(ON)@VGS=-10V,TYP 18 mΩ RDS(ON)@VGS=-4.5V,TYP22 mΩ Absolute Maximum Ratings Parameter Symbol Limit Units Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current *AC TA=25℃ ID -8 A TA=70℃ -5.5 Pulsed Drain Current *B IDM -31.6 A Power Dissipation TA=25℃ PD 2 W Operating temperature / storage temperature TJ/TSTG -55~150 ℃ Thermal Resistance Ratings Parameter Symbol Typical Maximum Units Maximum Junction-to-Ambient Steady State RthJA 50 62.5 °C/W Maximum Junction-to-Lead RthJL 25 35 |
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