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4616 Datasheet(PDF) 6 Page - Shenzhen Tuofeng Semiconductor Technology Co

Part # 4616
Description  N and P-Channel Enhancement Mode Power MOSFET
PDF  10 Pages
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Manufacturer  TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]
Direct Link  http://www.sztuofeng.com/?lang=en
Logo TUOFENG - Shenzhen Tuofeng Semiconductor Technology Co

4616 Datasheet(HTML) 6 Page - Shenzhen Tuofeng Semiconductor Technology Co

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SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
SOP-8 Plastic-Encapsulate MOSFETS
4616
www.sztuofeng.com
P-CH Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
-30
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=-30V,VGS=0V
-
-
-1
μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
-
-
±100
nA
On Characteristics
(Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250μA
-1.1
-1.4
-2.0
V
Drain-Source On-State Resistance
RDS(ON)
VGS=-10V, ID=-7.0A
-
26
29
mΩ
Forward Transconductance
gFS
VDS=-5V,ID=-7.0A
10
-
-
S
Dynamic Characteristics
(Note4)
Input Capacitance
Clss
-
1040
-
PF
Output Capacitance
Coss
-
180
-
PF
Reverse Transfer Capacitance
Crss
VDS=-15V,VGS=0V,
F=1.0MHz
-
125
-
PF
Switching Characteristics
(Note 4)
Turn-on Delay Time
td(on)
-
10
-
nS
Turn-on Rise Time
tr
-
5.5
-
nS
Turn-Off Delay Time
td(off)
-
26
-
nS
Turn-Off Fall Time
tf
VDD=-15V, RL=2.3Ω
VGS=-10V,RGEN=6Ω
-
9
-
nS
Total Gate Charge
Qg
-
19
-
nC
Gate-Source Charge
Qgs
-
3.6
-
nC
Gate-Drain Charge
Qgd
VDS=-15V,ID=-7.0A
VGS=-10V
-
4.6
-
nC
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
VSD
VGS=0V,IS=-7.0A
-
0.75
-1.0
V
-
VGS=-4.5V, ID=-5.0A
-
34
38
mΩ
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t ≤ 10 sec.
3.
Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2 .
%
4.
Guaranteed by design, not subject to production



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