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4616 Datasheet(PDF) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co

Part # 4616
Description  N and P-Channel Enhancement Mode Power MOSFET
PDF  10 Pages
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Manufacturer  TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]
Direct Link  http://www.sztuofeng.com/?lang=en
Logo TUOFENG - Shenzhen Tuofeng Semiconductor Technology Co

4616 Datasheet(HTML) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co

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N and P-Channel Enhancement Mode Power MOSFET
Description
The 4616 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge . The complementary
MOSFETs may be used to form a level shifted high side
switch, and for a host of other applications.
General Features
● N-Channel
VDS = 30V,ID =8.0A
RDS(ON) < 19mΩ @ VGS=10V
● P-Channel
VDS = -30V,ID = -7.0A
RDS(ON) < 29mΩ @ VGS=-10V
●
High power and current handing capability
●
Lead free product is acquired
●
Surface mount package
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
VDS
30
-30
V
Gate-Source Voltage
VGS
±20
±20
V
TA=25℃
8.0
-7.0
Continuous Drain Current
ID
A
Pulsed Drain Current
(Note 1)
IDM
30
-30
A
Maximum Power Dissipation
TA=25℃
PD
2.0
2.0
W
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 150
-55 To 150
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient
(Note2)
RθJA
N-Ch
62.5
/W
℃
Thermal Resistance,Junction-to-Ambient
(Note2)
RθJA
P-Ch
62.5
/W
℃
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
SOP-8 Plastic-Encapsulate MOSFETS
4616
RDS(ON) < 25mΩ @ VGS=4.5V
RDS(ON) < 38mΩ @ VGS=-4.5V
www.sztuofeng.com
N-channel
P-channel
Equivalent Cir cuit
MARKING
4616
o
TFCYWP
Y :year code W :week code
SOP-8


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