TF2328 datasheet(2/5 Pages) TUOFENG

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SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Limits

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 250uA

100

Gate-Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

1.3

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

VDS = 80 V, VGS = 0 V

200

Zero Gate Voltage Drain Current

IDSS

On-State Drain Currenta

ID(on)

VDS w 15 V, VGS = 10 V

Drain-Source On-Resistancea

rDS(on)

VGS = 10 V, ID = 1.5 A

0.300

Forward Transconductancea

gfs

VDS = 15 V, ID = 1.5 A

Diode Forward Voltage

VSD

IS = 1.0 A, VGS = 0 V

0.8

1.2

Dynamicb

Total Gate Charge

3.3

4.0

Gate-Source Charge

Qgs

VDS = 50 V, VGS = 10 V, ID = 1.5 A

0.47

Gate-Drain Charge

Qgd

1.45

Switching

Turn-On Delay Time

td(on)

Rise Time

VDD = 50 V, RL = 33 W

Turn-Off Delay Time

td(off)

VDD = 50 V, RL = 33 W

ID ^ 0.2 A, VGEN = 10 V, RG = 6 W

Fall-Time

Source-Drain Reverse Recovery Time

trr

IF = 1.5 A, di/dt = 100 A/ms

100

Notes

Pulse test: PW

v300 ms duty cycle v2%.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

02468

VGS = 10, 9, 8 V

TC = 125_C

–55

6 V

Output Characteristics

Transfer Characteristics

VDS – Drain-to-Source Voltage (V)

VGS – Gate-to-Source Voltage (V)

5 V

4 V

7 V

3, 2, 1 V

2.5

0.250

TF2328

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD

SOT-23 Plastic-Encapsulate MOSFETS

www.sztuofeng.com

Feb,2018 V1.0

TF2328 Datasheet(PDF) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

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