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6604 Datasheet(PDF) 3 Page - Shenzhen Tuofeng Semiconductor Technology Co

Part # 6604
Description  N and P-Channel Enhancement Mode Power MOSFET
PDF  9 Pages
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Manufacturer  TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]
Direct Link  http://www.sztuofeng.com/?lang=en
Logo TUOFENG - Shenzhen Tuofeng Semiconductor Technology Co

6604 Datasheet(HTML) 3 Page - Shenzhen Tuofeng Semiconductor Technology Co

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N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
4
8
12
16
0
0.5
1
1.5
2
2.5
V
GS(Volts)
Figure 2: Transfer Characteristics (Note E)
40
60
80
100
120
0
3
6
9
12
I
D (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
V
GS=4.5V
I
D=3.4A
V
GS=1.8V
I
D=2A
V
GS=2.5V
I
D=3A
25°C
125°C
V
DS=5V
V
GS=2.5V
V
GS=4.5V
0
4
8
12
16
0
1
2
3
4
5
V
DS (Volts)
Fig 1: On-Region Characteristics (Note E)
V
GS=1.5V
2V
2.5V
4.5V
V
GS=1.8V
40
0
4
8
12
16
0
0.5
1
1.5
2
2.5
V
GS(Volts)
Figure 2: Transfer Characteristics (Note E)
40
60
80
100
120
0
3
6
9
12
I
D (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD (Volts)
Figure 6: Body-Diode Characteristics (NoteE)
25°C
125°C
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
V
GS=4.5V
I
D=3.4A
V
GS=1.8V
I
D=2A
V
GS=2.5V
I
D=3A
40
60
80
100
120
0
2
4
6
8
V
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
25°C
125°C
V
DS=5V
V
GS=2.5V
V
GS=4.5V
I
D=3.4A
25°C
125°C
0
4
8
12
16
0
1
2
3
4
5
V
DS (Volts)
Fig 1: On-Region Characteristics (Note E)
V
GS=1.5V
2V
2.5V
4.5V
V
GS=1.8V
6604
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
www.sztuofeng.com
3
Jan 2019 V1.1
N and P-Channel Enhancement Mode Power MOSFET



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