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6604 Datasheet(PDF) 6 Page - Shenzhen Tuofeng Semiconductor Technology Co

Part # 6604
Description  N and P-Channel Enhancement Mode Power MOSFET
PDF  9 Pages
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Manufacturer  TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]
Direct Link  http://www.sztuofeng.com/?lang=en
Logo TUOFENG - Shenzhen Tuofeng Semiconductor Technology Co

6604 Datasheet(HTML) 6 Page - Shenzhen Tuofeng Semiconductor Technology Co

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Symbol
Min
Typ
Max
Units
BVDSS
-20
V
V
DS=-20V, VGS=0V
-1
IGSS
±100
nA
VGS(th)
Gate Threshold Voltage
-0.4
-0.65
-1
V
ID(ON)
-13
A
65
75
Ω
Ω
gFS
13
S
VSD
-0.7
-1
V
IS
-1.5
A
Ciss
560
745
pF
Coss
80
pF
Crss
70
pF
Rg
15
23
Ω
Qg(4.5V)
8.5
11
nC
Qgs
1.2
nC
Qgd
2.1
nC
tD(on)
7.2
ns
tr
36
ns
tD(off)
53
ns
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
VGS=-4.5V, VDS=-10V, RL=4Ω,
RGEN=6Ω
Gate resistance
VGS=0V, VDS=0V, f=1MHz
VGS=-4.5V, VDS=-10V, ID=-2.5A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
RDS(ON)
Static Drain-Source On-Resistance
m
Ω
I
S=-1A,VGS=0V
V
DS=-5V, ID=-2.5A
V
GS=-2.5V, ID=-2A
V
GS=-1.8V, ID=-1A
V
DS=VGS ID=-250µA
VDS=0V, VGS= ±8V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Forward Transconductance
Diode Forward Voltage
P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
IDSS
µA
Drain-Source Breakdown Voltage
On state drain current
I
D=-250µA, VGS=0V
V
GS=-4.5V, VDS=-5V
V
GS=-4.5V, ID=-2.5A
Reverse Transfer Capacitance
VGS=0V, VDS=-10V, f=1MHz
SWITCHING PARAMETERS
tD(off)
53
ns
tf
56
ns
trr
37
49
ns
Qrr
27
nC
Body Diode Reverse Recovery Charge IF=-2.5A, dI/dt=100A/µs
Turn-Off DelayTime
RGEN=6Ω
Turn-Off Fall Time
Body Diode Reverse Recovery Time
IF=-2.5A, dI/dt=100A/µs
A. The value of RθJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation P
D is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialT
J=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T
J(MAX)=150°C. The SOA curve provides a single pulse rating.
105
m
95
180
170
6604
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
www.sztuofeng.com
6
Jan 2019 V1.1
N and P-Channel Enhancement Mode Power MOSFET
m



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