Absolute Maximum Ratings (Note 6)

Supply Voltage (V

−0.3V to +4.0V

CMOS Input Voltage

-0.3V to (V

LVDS Receiver Input Voltage

-0.3V to (V

LVDS Driver Output Voltage

-0.3V to (V

LVDS Output Short Circuit

Current

+40 mA

Junction Temperature

+150˚C

Storage Temperature

−65˚C to +150˚C

Lead Temperature (Solder, 4sec)

260˚C

5.2W

Thermal Resistance (

θ

24˚C/W

Package Derating above +25˚C

41.7mW/˚C

ESD Last Passing Voltage

HBM, 1.5k

Ω, 100pF

8kV

LVDS pins to GND only

15kV

EIAJ, 0

Ω, 200pF

250V

CDM

1000V

Recommended Operating

Conditions

Supply Voltage (V

3.0V to 3.6V

Input Voltage (V

0V to V

CC

Output Voltage (V

0VtoV

CC

Operating Temperature (T

Industrial

−40˚C to +85˚C

Note 6: Absolute maximum ratings are those values beyond which damage

to the device may occur. The databook specifications should be met, without

exception, to ensure that the system design is reliable over its power supply,

temperature, and output/input loading variables. National does not recom-

mend operation of products outside of recommended operation conditions.

Electrical Characteristics

Over recommended operating supply and temperature ranges unless other specified.

Symbol

Parameter

Conditions

Min

Typ

(Note 8)

Max

Units

LVTTL DC SPECIFICATIONS (MUX_Sn, PREA_n, PREB_n, PREL_n, ENA_n, ENB_n, ENL_n)

V

IH

High Level Input Voltage

2.0

V

DD

V

V

IL

Low Level Input Voltage

GND

0.8

V

I

IH

High Level Input Current

V

−10

+10

µA

I

IHR

High Level Input Current

PREA_n, PREB_n, PREL_n

40

200

µA

I

IL

Low Level Input Current

V

−10

+10

µA

C

IN1

Input Capacitance

Any Digital Input Pin to V

SS

2.0

pF

C

OUT1

Output Capacitance

Any Digital Output Pin to V

SS

4.0

pF

V

CL

Input Clamp Voltage

I

−1.5

−0.8

V

V

TH

Differential Input High Threshold

(Note 9)

V

V

0

100

mV

V

TL

Differential Input Low Threshold

(Note 9)

V

V

−100

0

mV

V

ID

Differential Input Voltage

V

100

2400

mV

V

CMR

Common Mode Voltage Range

V

0.05

3.55

V

C

IN2

Input Capacitance

IN+ or IN− to V

SS

2.0

pF

I

IN

Input Current

V

−15

+15

µA

V

−15

+15

µA

V

OD

Differential Output Voltage,

0% Pre-emphasis (Note 9)

R

Ω between OUT+

and OUT−

250

360

500

mV

∆V

OD

Change in V

Complementary States

-35

35

mV

V

OS

Offset Voltage (Note 10)

1.05

1.22

1.475

V

∆V

OS

Change in V

Complementary States

-35

35

mV

I

OS

Output Short Circuit Current

OUT+ or OUT− Short to GND

−21

-40

mA

C

OUT2

Output Capacitance

OUT+ or OUT− to GND when

TRI-STATE

4.0

pF

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