HAL115 datasheet(7/17 Pages) MICRONAS

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HAL11x

Micronas

3.6. Electrical Characteristics at TJ = –40 °C to +140 °C , VDD = 4.5 V to 24 V, as not otherwise specified in Conditions

Typical Characteristics for TJ = 25 °C and VDD = 12 V

Symbol

Parameter

Pin No.

Min.

Typ.

Max.

Unit

Conditions

IDD

Supply Current

8.2

TJ = 25 °C

IDD

Supply Current over

Temperature Range

3.9

8.2

VOL

Output Voltage over

Temperature Range

–

120

400

IOL = 12.5 mA

VOL

Output Voltage over

Temperature Range

–

190

500

IOL = 20 mA

IOH

Output Leakage Current

–

0.06

µA

B < Boff,

TJ = 25 °C, VOH = 0 to 24 V

IOH

Output Leakage Current over

Temperature Range

–

µA

B < Boff,

VOH = 0 to 24 V

ten(O)

Enable Time of Output after

Setting of VDD

–

µs

VDD = 12 V

B > BON + 2 mT or

B < BOFF – 2 mT

Output Rise Time

–

0.08

0.4

µs

VDD = 12 V, RL = 820 Ohm,

CL = 20 pF

Output Fall Time

–

0.06

0.4

µs

VDD = 12 V, RL = 820 Ohm,

CL = 20 pF

RthJSB

case

SOT-89A

SOT-89B

Thermal Resistance Junction

to Substrate Backside

–

150

200

K/W

Fiberglass Substrate

30 mm x 10 mm x 1.5mm,

pad size see Fig. 3–4

RthJA

case

TO-92UA

Thermal Resistance Junction

to Soldering Point

–

150

200

K/W

Fig. 3–4: Recommended pad size SOT-89x

Dimensions in mm

5.0

2.0

1.0

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