QPD1013

150W, 65V, DC

– 2.7 GHz, GaN RF Transistor

Rev. A

- 2 of 25 -

Disclaimer: Subject to change without notice

© 2017 Qorvo

www.qorvo.com

Parameter

Rating

Units

225

V

-8 to +2

V

9

A

19.2

mA

74

W

RF Input Power at 1.6 GHz

, CW, 50 Ω, T = 25 °C

+39

dBm

275

°C

Mounting Temperature (30 Seconds)

°C

Storage Temperature

−65 to +150

°C

Notes:

1.

At Channel temperature of 200°C.

2.

Operation of this device outside the parameter ranges given above may cause permanent damage.

Parameter

Min

Typ

Max

Units

Operating Temp. Range

−40

+25

+85

 °C

–

+65

+70

V

–

240

–

mA

–

1.7

–

A

–

−2.8

–

V

–

–

250

°C

–

–

67.0

W

–

–

120.0

W

Notes:

1. Electrical performance is measured under conditions noted in the electrical specifications table. Specifications are not

guaranteed over all recommended operating conditions.

2. Back plane of package at 85 °C

3. Pulse Width = 100 us, Duty Cycle = 10%