K

A

TO-220AC

K

A

K

D²PAK HV

K

NC

A

D²PAK

K

NC

A

K

A

Features

•

No or negligible reverse recovery

•

Switching behavior independent of temperature

•

Dedicated to PFC applications

•

High forward surge capability

•

•

D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.

•

ECOPACK2 compliant

•

Power efficient product

Applications

•

DC/DC converter

•

High frequency inverter

•

Snubber

•

Boost PFC function

Description

The SiC diode is an ultra high performance power Schottky diode. It is manufactured

using a silicon carbide substrate. The wide band gap material allows the design of

a Schottky diode structure with a 650 V rating. Due to the Schottky construction,

no recovery is shown at turn-off and ringing patterns are negligible. The minimal

capacitive turn-off behavior is independent of temperature.

Housed in D²PAK HV, this diode is perfectly suited for a usage in PFC applications, in

charging station, DC/DC, easing the compliance to IEC-60664-1.

Product label

Product status link

STPSC12065

Product summary

Symbol

Value

12 A

650 V

175 °C

1.30 V

650 V, 12 A power Schottky silicon carbide diode

STPSC12065

Datasheet

DS11623 - Rev 3 - March 2021

For further information contact your local STMicroelectronics sales office.

www.st.com