LBB

1

2

3

4

5

Pin connection

Pin

Connection

1

Drain A

2

Drain B

3

Source (bottom side)

4

Gate B

5

Gate A

Features

Order code

Frequency

VDD

POUT

Gain

Efficiency

RF2L15200CB4

860 MHz

28 V

200 W

17.5 dB

72%

•

High efficiency and linear gain operations

•

Integrated ESD protection

•

Large positive and negative gate-source voltage range for improved class C

operation

•

Excellent thermal stability, low HCI drift

•

In compliance with the european directive 2002/95/EC

Applications

•

Broadband commercial communications

•

TV broadcast

•

Avioncs

•

Industrial

Description

The RF2L15200CB4 is a 200 W LDMOS FET, designed for wideband communication

and ISM applications with frequencies from HF to 1.5 GHz. It can be used in class

AB, B or C for all typical modulation formats.

Product status link

RF2L15200CB4

Product summary

Order code

RF2L15200CB4

Marking

2L15200

Package

LBB

Packing

Tape and reel 13"

Base/bulk quantity

100/100

200 W, 28 V, HF to 1.5 GHz RF power LDMOS transistor

RF2L15200CB4

Datasheet

DS13389 - Rev 2 - April 2021

For further information contact your local STMicroelectronics sales office.

www.st.com