3

Typical performances

Table 6. Output power, power gain and drain efficiency vs input power (f= 860 MHz, CW)

PIN (dBm)

POUT (dBm)

POUT (W)

IDS (A)

GPS (dB)

ƞD (%)

22.9

41.9

15.6

2.5

19.0

22.1

24.0

43.3

21.2

3.0

19.3

25.7

25.0

44.6

28.5

3.4

19.6

29.7

26.0

45.8

38.1

4.0

19.8

34.2

27.0

47.1

50.8

4.6

20.1

39.4

28.1

48.4

69.3

5.4

20.3

45.9

29.2

49.6

91.7

6.2

20.4

52.7

30.2

50.7

118.6

7.1

20.5

59.6

31.4

51.8

150.3

8.1

20.4

66.5

32.5

52.4

174.8

8.8

19.9

70.9

33.6

52.8

189.5

9.3

19.1

73.0

34.7

53.0

197.4

9.8

18.2

72.3

35.3

53.0

199.1

9.9

17.7

72.0

35.8

53.0

199.4

9.9

17.2

72.2

Figure 1. Power gain and drain efficiency versus output power (f = 860 MHz, CW)

GADG160320200938SA

GADG250620201026SA

0

15

30

45

60

75

90

16

17

18

19

20

21

22

0

20

40

60

80

100

120

140

160

180

200

220

Output power (W)

η

D

GPS

Note:

VDD = 50 V, IDQ =100 mA.

RF2L15200CB4

Typical performances

DS13389 - Rev 2

page 4/13