D4E

3

1

2

5

4

Pin connection

Pin

Connection

1

Drain A

2

Drain B

3

Source (bottom side)

4

Gate B

5

Gate A

Features

Order code

Frequency

VDD

POUT

Gain

Efficiency

RF4L10700CB4

915 MHz

40 V

700 W

15 dB

70%

•

High efficiency and linear gain operations

•

Integrated ESD protection

•

Internally matched pair transistors in push-pull configuration

•

Large positive and negative gate-source voltage range for improved class C

operation

•

Optimized for Doherty applications

•

Excellent thermal stability, low HCI drift

•

In compliance with the European directive 2002/95/EC

Applications

•

ISM

•

RF energy

Description

The RF4L10700CB4 is a 700 W, 40 V, high performance, internally matched LDMOS

FET, designed for multiple ISM and RF energy applications up to 1 GHz frequency

range. It can be used in class AB, B or C for both CW and pulse applications in

narrow-band operation. It is qualified up to 40 V operation.

Product status link

RF4L10700CB4

Product summary

Order code

RF4L10700CB4

Marking

4L10700

Package

D4E

Packing

Tray

Base/bulk quantity

20/100

700 W, 40 V, HF to 1 GHz RF power LDMOS transistor

RF4L10700CB4

Datasheet

DS13741 - Rev 2 - September 2021

For further information contact your local STMicroelectronics sales office.

www.st.com