GXB

3

1

2

Pin connection

Pin

Connection

1

Drain

2

Source (bottom side)

3

Gate

Features

Order code

Frequency

VDD

POUT

Gain

Efficiency

RF5L15030CB2

1 GHz

50 V

30 W

23.5 dB

50%

•

High efficiency and linear gain operations

•

Integrated ESD protection

•

Large positive and negative gate-source voltage range for improved class C

operation

•

In compliance with the European directive 2002/95/EC

Applications

•

Industrial, scientific and medical from HF to 1.5 GHz

•

FM and TV broadcast

•

HV/VHF ground communications

•

Avionics and L-band radar

•

Wideband communications

Description

The RF5L15030CB2 is a 30 W, 50 V, LDMOS FET designed for applications in the

frequency range from HF to 1.5 GHz. It can be used in class AB, B or C for all typical

modulation formats.

Product status link

RF5L15030CB2

Product summary

Order code

RF5L15030CB2

Marking

5L15030

Package

GXB

Packing

Tape and reel 13"

Base/bulk quantity

180/180

30 W, 50 V, HF to 1.5 GHz RF power LDMOS transistor

RF5L15030CB2

Datasheet

DS13641 - Rev 2 - September 2021

For further information contact your local STMicroelectronics sales office.

www.st.com