ST50V10200 datasheet(3/8 Pages) STMICROELECTRONICS

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Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4. Static (per side)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID = 100 µA

110

IDSS

Zero-gate voltage drain current

VGS = 0 V, VDS = 50 V

μA

IGSS

Gate-body leakage current

VDS = 0 V, VGS = 6 V

μA

VGS(th)

Gate threshold voltage

VDS = 28 V, ID = 600 μA

TBD

VDS(on)

Static drain-source on-resistance

VGS = 10 V, ID = 5 A

1.4

CISS

Common source input capacitance

VGS = 0 V, VDD = 50 V,

FREQ = 1 MHz

118

CRSS

Common source feedback

capacitance

COSS

Common source output

capacitance

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

POUT

Output power

VDD = 50 V, IDQ = 0.2 A,

FREQ = 1000 MHz,

225

Gain

Power gain

17.5

Efficiency

Drain efficiency

IMD3

3rd order intermodulation

TBD

dBc

VSWR

Load mismatch

POUT = 200 W, all phases

10:1

Table 6. Impedance data

Frequency (in MHz)

Input impedance (ZIN)

Drain load impedance (ZDL)

TBD

100

TBD

200

TBD

ST50V10200

Electrical characteristics

DS12765 - Rev 2

page 3/8

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