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50N03. Datasheet(PDF) 1 Page - VBsemi Electronics Co.,Ltd

Part # 50N03.
Description  N-Channel 30 V (D-S) MOSFET
PDF  10 Pages
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Manufacturer  VBSEMI [VBsemi Electronics Co.,Ltd]
Direct Link  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

50N03. Datasheet(HTML) 1 Page - VBsemi Electronics Co.,Ltd

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N-Channel 30 V (D-S) MOSFET
FEATURES
• TrenchFET® power MOSFET
• Package with low thermal resistance
• 100 % Rg and UIS tested
Notes
a. Package limited.
b. Pulse test; pulse width
 300 μs, duty cycle  2 %.
c. When mounted on 1" square PCB (FR4 material).
PRODUCT SUMMARY
VDS (V)
30
RDS(on) () at VGS = 10 V
0.0075
RDS(on) () at VGS = 4.5 V
0.0095
ID (A)
70
Configuration
Single
Package
TO-220AB/ TO-263
N-Channel MOSFET
G
D
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
TC = 25 °C a
ID
70
A
TC = 125 °C
50
Continuous Source Current (Diode Conduction) a
IS
70
Pulsed Drain Current b
IDM
250
Single Pulse Avalanche Current
L = 0.1 mH
IAS
33
Single Pulse Avalanche Energy
EAS
54
mJ
Maximum Power Dissipation b
TC = 25 °C
PD
71
W
TC = 125 °C
23
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to +175
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Junction-to-Ambient
PCB Mount c
RthJA
50
°C/W
Junction-to-Case (Drain)
RthJC
2.1
TO-263
S
D
G
Top View
TO-220AB
Top View
GD S
www.VBsemi.com
m
m
m
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服务热线：400-655-8788
50N03.
1


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