50N03. datasheet(2/10 Pages) VBSEMI

2 / 10 page

Notes

a. Pulse test; pulse width

 300 μs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 μA

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

1.0

2.5

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 100

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V

VDS = 30 V

μA

VGS = 0 V

VDS = 30 V, TJ = 125 °C

VGS = 0 V

VDS = 30 V, TJ = 175 °C

150

On-State Drain Current a

ID(on)

VGS = 10 V

VDS  5 V

Drain-Source On-State Resistance a

RDS(on)

VGS = 10 V

ID = 20 A

0.007



VGS = 10 V

ID = 20 A, TJ = 125 °C

0.010

VGS = 10 V

ID = 20 A, TJ = 175 °C

0.014

VGS = 4.5 V

ID = 15 A

0.010

Forward Transconductance b

gfs

VDS = 15 V, ID = 15 A

100

Dynamic b

Input Capacitance

Ciss

VGS = 0 V

VDS = 25 V, f = 1 MHz

1850

2200

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Total Gate Charge c

VGS = 10 V

VDS = 20 V, ID = 50 A

-46

Gate-Source Charge c

Qgs

-10

Gate-Drain Charge c

Qgd

-8

Gate Resistance

f = 1 MHz

1.3

2.8

4.5



Turn-On Delay Time c

td(on)

VDD = 20 V, RL = 0.4 

ID  50 A, VGEN = 10 V, Rg = 1 

-9

Rise Time c

-19

Turn-Off Delay Time c

td(off)

-26

Fall Time c

-10

Source-Drain Diode Ratings and Characteristics b

Pulsed Current a

ISM

200

Forward Voltage

VSD

IF = 30 A, VGS = 0 V

0.87

1.5

260

400

200

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50N03.

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