6.4 Thermal Information

THERMAL METRIC(1)

ISOUSB211

UNIT

DP (SSOP)

28 PINS

RΘJA

Junction-to-ambient thermal resistance

44.2

°C/W

RΘJC(top)

Junction-to-case (top) thermal resistance

13.9

°C/W

RΘJB

Junction-to-board thermal resistance

19.0

°C/W

ψJT

Junction-to-top characterization parameter

3.3

°C/W

ψJB

Junction-to-board characterization parameter

18.4

°C/W

RΘJC(bot)

Junction-to-case (bottom) thermal resistance

-

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.5 Power Ratings

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

ISOUSB211

PD

Maximum power dissipation (both sides)

VBUS1 = VBUS2 = VCC1 = VCC2 = 5.5 V,

TJ = 150°C, RL = 50 Ω each on DD-

and DD+ to GNDx, input a 240-MHz 50%

duty cycle adifferential 0 to 400mV swing

signal on UD- and UD+

1210

mW

PD1

Maximum power dissipation (side-1)

VBUS1 = VBUS2 = VCC1 = VCC2 = 5.5 V,

TJ = 150°C, RL = 50 Ω each on DD-

and DD+ to GNDx, input a 240-MHz 50%

duty cycle adifferential 0 to 400mV swing

signal on UD- and UD+

605

mW

PD2

Maximum power dissipation (side-2)

VBUS1 = VBUS2 = VCC1 = VCC2 = 5.5 V,

TJ = 150°C, RL = 50 Ω each on DD-

and DD+ to GNDx, input a 240-MHz 50%

duty cycle adifferential 0 to 400mV swing

signal on UD- and UD+

605

mW

ISOUSB211

SLLSFC5B – NOVEMBER 2021 – REVISED SEPTEMBER 2022

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