STB12N60DM2AG datasheet(6/15 Pages) STMICROELECTRONICS

Part #	STB12N60DM2AG

Description	Automotive-grade N-channel 600 V, 380 m typ., 10 A MDmesh DM2 Power MOSFET in a D²PAK package

PDF	15 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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6 / 15 page

Figure 7. Typical capacitance characteristics

IGIPG120420181145CVR

10 3

10 2

10 1

10 0

10 -1

10 0

10 1

10 2

(pF)

VDS (V)

CISS

COSS

CRSS

f = 1 MHz

Figure 8. Normalized gate threshold vs temperature

GIPG120420181044VTH

1.2

1.0

0.8

0.6

0.4

-75

-25

125

VGS(th)

(norm.)

Tj(°C)

ID=250 μA

Figure 9. Normalized on-resistance vs temperature

GIPG120420181045RON

2.5

2.0

1.5

1.0

0.5

0.0

-75

-25

125

RDS(on)

(norm.)

VGS = 10 V

Tj(°C)

Figure 10. Normalized breakdown voltage vs temperature

GIPG120420181045BDV

1.10

1.05

1.00

0.95

0.90

0.85

-75

-25

125

V(BR)DSS

(norm.)

ID = 1 mA

Tj(°C)

Figure 11. Typical output capacitance stored energy

100 200 300 400 500 600 VDS (V)

Eoss

(µJ )

GIPG270516FQ6F01FEOS

Figure 12. Typical reverse diode forward characteristics

GIPG120420181046SDF

1.2

1.0

0.8

0.6

0.4

VSD

(V)

ISD (A)

Tj= -50

℃

Tj=25

℃

Tj=150

℃

STB12N60DM2AG

Electrical characteristics (curves)

DS13374 - Rev 2

page 6/15

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