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13N50DM2 Datasheet(PDF) 6 Page - STMicroelectronics |
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13N50DM2 Datasheet(HTML) 6 Page - STMicroelectronics |
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6 / 16 page ![]() Figure 7. Typical drain-source on-resistance GIPG160420181303RID 360 340 320 300 280 260 0 2 4 6 8 10 RDS(on) (mΩ) ID (A) VGS = 10 V Figure 8. Normalized on-resistance vs. temperature GIPG120420181045RON 2.5 2.0 1.5 1.0 0.5 0.0 -75 -25 25 75 125 RDS(on) (norm.) VGS = 10 V Tj(°C) Figure 9. Typical gate charge characteristics GIPG160420181259QVG 400 300 200 100 0 16 12 8 4 0 0 4 8 12 16 VDS (V) VGS (V) Qg (nC) VDS Qgd VDD = 480 V ID = 11 A Qg Qgs Figure 10. Typical capacitance characteristics GIPG160420181259CVR 10 3 10 2 10 1 10 0 10 -1 10 0 10 1 10 2 C (pF) VDS (V) CISS COSS CRSS f = 1 MHz Figure 11. Typical output capacitance stored energy GIPD040316FQ5FDEOS 4 3 2 1 0 0 100 200 300 400 500 EOSS (µJ) VDS (V) Figure 12. Typical reverse diode forward characteristics GIPG160420181300SDF 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0 2 4 6 8 10 VSD (V) ISD (A) Tj = -50 °C Tj = 25 °C Tj = 150 °C STD13N50DM2AG Electrical characteristics (curves) DS12210 - Rev 4 page 6/16 |
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