13N50DM2 datasheet(3/16 Pages) STMICROELECTRONICS

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Electrical characteristics

(TC = 25 °C unless otherwise specified).

Table 4. Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0 V, ID = 1 mA

500

IDSS

Zero gate voltage drain

current

VGS = 0 V, VDS = 500 V

µA

VGS = 0 V, VDS = 500 V,

TC = 125 °C(1)

100

µA

IGSS

Gate-body leakage current

VDS = 0 V, VGS = ±25 V

±5

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 5.5 A

320

360

mΩ

1. Defined by design, not subject to production test.

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS= 100 V, f = 1 MHz,

VGS = 0 V

597

Coss

Output capacitance

Crss

Reverse transfer capacitance

3.5

Coss eq. (1)

Equivalent output capacitance VDS = 0 V to 400 V, VGS = 0 V

Intrinsic gate resistance

f = 1 MHz open drain

Total gate charge

VDD = 400 V, ID = 11 A,

VGS = 0 to 10 V (see

Figure 14. Test circuit for gate

charge behavior)

11.7

Qgs

Gate-source charge

3.8

Qgd

Gate-drain charge

4.2

1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0

to 80% VDSS

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 250 V, ID = 5.5 A

RG = 4.7 Ω, VGS = 10 V (see

Figure 13. Test circuit for

resistive load switching times

and Figure 18. Switching time

waveform)

Rise time

td(off)

Turn-off delay time

Fall time

STD13N50DM2AG

Electrical characteristics

DS12210 - Rev 4

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