13N50DM2 datasheet(2/16 Pages) STMICROELECTRONICS

Part #	13N50DM2

Description	Automotive-grade N-channel 500 V, 320 m typ., 11 A MDmesh DM2 Power MOSFET in a DPAK package

PDF	16 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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2 / 16 page

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±25

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC= 100 °C

IDM (1)

Drain current (pulsed)

PTOT

Total power dissipation at TC = 25 °C

110

dv/dt (2)

Peak diode recovery voltage slope

V/ns

dv/dt (3)

MOSFET dv/dt ruggedness

V/ns

Tstg

Storage temperature range

-55 to 150

°C

Operating junction temperature range

1. Pulse width limited by safe operating area.

2. ISD ≤ 11 A, di/dt ≤ 800 A/µs; VDS peak < V(BR)DSS, VDD = 400 V

3. VDS ≤ 400 V

Table 2. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

1.14

°C/W

Rthj-pcb (1)

Thermal resistance junction-pcb

1. When mounted on a 1-inch² FR-4, 2 oz Cu board

Table 3. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetetive or not repetetive

(pulse width limited by Tjmax)

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

230

STD13N50DM2AG

Electrical ratings

DS12210 - Rev 4

page 2/16

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