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STW72N60DM6AG Datasheet(PDF) 1 Page - STMicroelectronics

Part # STW72N60DM6AG
Description  Automotive-grade N-channel 600 V, 37 m typ., 56 A, MDmesh DM6 Power MOSFET in a TO‑247 package
PDF  12 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STW72N60DM6AG Datasheet(HTML) 1 Page - STMicroelectronics

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TO-247
1
2
3
D(2, TAB)
G(1)
S(3)
AM01476v1_tab
Features
Order code
VDS
RDS(on) max.
ID
STW72N60DM6AG
600 V
42 mΩ
56 A
•
AEC-Q101 qualified
•
Fast-recovery body diode
•
Lower RDS(on) per area vs previous generation
•
Low gate charge, input capacitance and resistance
•
100% avalanche tested
•
Extremely high dv/dt ruggedness
•
Zener-protected
Applications
•
Switching applications
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-
recovery diode series. Compared with the previous MDmesh fast generation,
DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent
improvement in RDS(on) per area with one of the most effective switching behaviors
available in the market for the most demanding high-efficiency bridge topologies and
ZVS phase-shift converters.
Product status links
STW72N60DM6AG
Product summary
Order code
STW72N60DM6AG
Marking
72N60DM6
Package
TO-247
Packing
Tube
Automotive-grade N-channel 600 V, 37 mΩ typ., 56 A, MDmesh DM6
Power MOSFET in a TO
‑247 package
STW72N60DM6AG
Datasheet
DS13001 - Rev 2 - May 2021
For further information contact your local STMicroelectronics sales office.
www.st.com


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