STW72N60DM6AG datasheet(4/12 Pages) STMICROELECTRONICS

Part #	STW72N60DM6AG

Description	Automotive-grade N-channel 600 V, 37 m typ., 56 A, MDmesh DM6 Power MOSFET in a TO‑247 package

PDF	12 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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4 / 12 page

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM(1)

Source-drain current (pulsed)

230

VSD(2)

Forward on voltage

VGS = 0 V, ISD = 56 A

1.6

trr

Reverse recovery time

ISD = 56 A, di/dt = 100 A/μs,

VDD = 60 V

(see Figure 15. Test circuit for

inductive load switching and diode

recovery times)

153

Qrr

Reverse recovery charge

0.9

µC

IRRM

Reverse recovery current

trr

Reverse recovery time

ISD = 56 A, di/dt = 100 A/μs,

VDD = 60 V, TJ = 150 °C

(see Figure 15. Test circuit for

inductive load switching and diode

recovery times)

285

Qrr

Reverse recovery charge

3.4

µC

IRRM

Reverse recovery current

1. Pulse width is limited by safe operating area

2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%

STW72N60DM6AG

Electrical characteristics

DS13001 - Rev 2

page 4/12

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